Calculation of electron transport in GaAs nanoscale junctions using first-principles
Acta Physica Sinica
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Acta Phys. Sin  2014, Vol. 63 Issue (13): 137303     doi:10.7498/aps.63.137303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Calculation of electron transport in GaAs nanoscale junctions using first-principles
Liu Fu-Ti1 2 3, Cheng Yan2, Chen Xiang-Rong2, Cheng Xiao-Hong1
1. College of Physics and Electronic Engineering, Yibin university, Yibin 644007, China;
2. College of Physical Science and Technology, Sichuan University, Chengdu 610064, China;
3. Computational Physics Key Laboratory of Sichuan Province of Yibin university, Yibin 644007, China
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