Generation mechanism of stress induced leakage current in flash memory cell
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2005, Vol. 54 Issue (12): 5867-5871    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Generation mechanism of stress induced leakage current in flash memory cell
Liu Hong-Xia, Zheng Xue-Feng, Hao Yue
西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室, 西安 710071
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn