Modeling of resistance changes based on the free volume in VLSI interconnection electromigration
Acta Physica Sinica
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Acta Phys. Sin.  2005, Vol. 54 Issue (12): 5872-5878    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Modeling of resistance changes based on the free volume in VLSI interconnection electromigration
Zong Zhao-Xiang1, Du Lei1, He Liang1, Zhuang Yi-Qi2, Wu Yong2
(1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学微电子研究所,西安 710071
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