Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
Acta Physica Sinica
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Acta Phys. Sin.  2005, Vol. 54 Issue (5): 2247-2251    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
Zheng Ze-Wei1, Lü Jie1, Tang Ning1, Shen Bo1, Yao Wei2, Qiu Zhi-Jun2, Gui Yong-Sheng2, Chu Jun-Hao2
(1)南京大学物理系,南京 210093; (2)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083
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