SiGe HBT large signal equivalent circuit model
Hu Hui-Yong, Zhang He-Ming, Lü Yi, Dai Xian-Ying, Hou Hui, Ou Jian-Feng, Wang Wei, Wang Xi-Yuan
西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室，西安 710071
Abstract A large signal equivalent circuit model for SiGe HBT is established based on the physical model of the transistor. The quasi saturation effect and the self-heating effect are taken into account in this equivalent circuit model. The model is composed of the intrinsic and the extrinsic parts, and has the features of clear physical meaning and simple topology. The model is embedded in the DEVEQ(Device Equations Developer) of PSPICE and simulated and analyzed by the PSPICE. The results conform to the theoretically analyzed conclusion and are in accordance with the published results in the literature.
Key words ：
SiGe HBT
equivalent circuit model
PSPICE
Received: 2004-12-21
Published: 2006-01-20
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong. Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI
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[8]
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2006, Vol. 55 
