Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field
Acta Physica Sinica
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Acta Phys. Sin.  2006, Vol. 55 Issue (10): 5023-5029    
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Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field
Liu Yu-Min1, Yu Zhong-Yuan1, Yang Hong-Bo1, Huang Yong-Zhen2
(1)北京邮电大学理学院,北京 100876;北京邮电大学光通信与光波技术教育部重点实验室,北京 100876; (2)中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083
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