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The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress

Ma Xiao-Hua Hao Yue Chen Hai-Feng Cao Yan-Rong Zhou Peng-Ju

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The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress

Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju
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  • Abstract views:  8321
  • PDF Downloads:  2413
  • Cited By: 0
Publishing process
  • Received Date:  04 April 2006
  • Accepted Date:  19 April 2006
  • Published Online:  20 November 2006

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