| [1] |
Yang Yu, Tang Cheng-Shuang, Zhao Yi-Fan, Yu Yi-Qing, Xin Yu. Electronegativity of capacitively coupled Ar+O2 plasma excited at very high frequency. Acta Physica Sinica,
2017, 66(18): 185202.
doi: 10.7498/aps.66.185202
|
| [2] |
Wang Jun, Wang Tao, Tang Cheng-Shuang, Xin Yu. Evolution of electron energy distribution function in capacitively coupled argon plasma driven by very high frequency. Acta Physica Sinica,
2016, 65(5): 055203.
doi: 10.7498/aps.65.055203
|
| [3] |
He Su-Ming, Dai Shan-Shan, Luo Xiang-Dong, Zhang Bo, Wang Jin-Bin. Preparation of SiON film by plasma enhanced chemical vapor deposition and passivation on Si. Acta Physica Sinica,
2014, 63(12): 128102.
doi: 10.7498/aps.63.128102
|
| [4] |
Hou Guo-Fu, Xue Jun-Ming, Yuan Yu-Jie, Zhang Xiao-Dan, Sun Jian, Chen Xin-Liang, Geng Xin-Hua, Zhao Ying. Key issues for high-efficiency silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions. Acta Physica Sinica,
2012, 61(5): 058403.
doi: 10.7498/aps.61.058403
|
| [5] |
Li Tian-Wei, Liu Feng-Zhen, Zhu Mei-Fang. rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film. Acta Physica Sinica,
2011, 60(1): 018103.
doi: 10.7498/aps.60.018103
|
| [6] |
Zhang Hai-Yan, Cao Ya-Ping, Yu Jian-Bo, Chen Xian-Hua. Actuating frequency selection of single mode Lamb waves using single piezoelectric transducer. Acta Physica Sinica,
2011, 60(11): 114301.
doi: 10.7498/aps.60.114301
|
| [7] |
Ding Yan-Li, Zhu Zhi-Li, Gu Jin-Hua, Shi Xin-Wei, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao. Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition. Acta Physica Sinica,
2010, 59(2): 1190-1195.
doi: 10.7498/aps.59.1190
|
| [8] |
Han Xiao-Yan, Hou Guo-Fu, Wei Chang-Chun, Zhang Xiao-Dan, Dai Zhi-Hua, Li Gui-Jun, Sun Jian, Chen Xin-Liang, Zhang De-Kun, Xue Jun-Ming, Zhao Ying, Geng Xin-Hua. Optimization of high rate growth high quality μc-Si:H thin films and its application to the solar cells. Acta Physica Sinica,
2009, 58(6): 4254-4259.
doi: 10.7498/aps.58.4254
|
| [9] |
Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying. Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica,
2009, 58(2): 1293-1297.
doi: 10.7498/aps.58.1293
|
| [10] |
Guo Xue-Jun, Lu Jing-Xiao, Chen Yong-Sheng, Zhang Qing-Feng, Wen Shu-Tang, Zheng Wen, Shen Chen-Hai, Chen Qing-Dong. Research on the high-rate deposition of μc-Si:H by VHF-PECVD. Acta Physica Sinica,
2008, 57(9): 6002-6006.
doi: 10.7498/aps.57.6002
|
| [11] |
Ge Hong, Zhang Xiao-Dan, Yue Qiang, Zhao Jing, Zhao Ying. Study of space voltage distribution between large-area parallel-plate electrodes for very high frequency plasma enhanced chemical vapor deposition. Acta Physica Sinica,
2008, 57(8): 5105-5110.
doi: 10.7498/aps.57.5105
|
| [12] |
Chen Fei, Zhang Xiao-Dan, Zhao Ying, Wei Chang-Chun, Sun Jian. Study of one-dimensional spatial distribution of the plasma luminous radicals during depositing silicon films. Acta Physica Sinica,
2008, 57(5): 3276-3280.
doi: 10.7498/aps.57.3276
|
| [13] |
Yu Wei, Wang Bao-Zhu, Yang Yan-Bin, Lu Wan-Bing, Fu Guang-Sheng. Optical emission diagnosis of helicon-wave-plasma-enhanced chemical vapor deposition of nanocrystalline silicon. Acta Physica Sinica,
2005, 54(5): 2394-2398.
doi: 10.7498/aps.54.2394
|
| [14] |
Zhang Xiao-Dan, Zhao Ying, Gao Yan-Tao, Zhu Feng, Wei Chang-Chun, Sun Jian, Wang Yan, Geng Xin-Hua, Xiong Shao-Zhen. Study of microcrystalline silicon solar cells fabricated by very high frequency plasma-enhanced chemical vapor deposition. Acta Physica Sinica,
2005, 54(4): 1899-1903.
doi: 10.7498/aps.54.1899
|
| [15] |
Zeng Xiang－Bo, Liao Xian－Bo, Wang Bo, Diao Hong－Wei, Dai Song－Tao, Xiang Xian－Bi, Chang Xiu－Lan, Xu Yan－Yue, Hu Zhi－Hua, Hao Hui－Ying, Kong Guang－Lin. Boron-doped silicon nanowires grown by plasmaenhanced chemical vapor deposition. Acta Physica Sinica,
2004, 53(12): 4410-4413.
doi: 10.7498/aps.53.4410
|
| [16] |
Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng. Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica,
2003, 52(3): 687-691.
doi: 10.7498/aps.52.687
|
| [17] |
Yang Hui-Dong, Wu Chun-Ｙa, Zhao Ying, Xue Jun-Ｍing, Geng Xin-Ｈua, Xiong Shao-Ｚhen. Investigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD. Acta Physica Sinica,
2003, 52(11): 2865-2869.
doi: 10.7498/aps.52.2865
|
| [18] |
NING ZHAO-YUAN, CHENG SHAN-HUA, YE CHAO. CHEMICAL BONDING STRUCTURE OF FLUORINATED AMORPHOUS CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica,
2001, 50(3): 566-571.
doi: 10.7498/aps.50.566
|
| [19] |
YE CHAO, NING ZHAO-YUAN, CHENG SHAN-HUA, KANG JIAN. STUDY ON α-C∶F FILMS DEPOSITED BY ELECTRON CYCLOTRONRESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica,
2001, 50(4): 784-789.
doi: 10.7498/aps.50.784
|
| [20] |
LIU XIANG-NA, WU XIAO-WEI, BAO XI-MAO, HE YU-LIANG. PHOTOLUMINESCENCE FROM NANO-CRYSTALLITES OF SILICON FILMS PREPARED BY PECVD. Acta Physica Sinica,
1994, 43(6): 985-990.
doi: 10.7498/aps.43.985
|
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