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Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111)

Ding Zhi-Bo Yao Shu-De Wang Kun Cheng Kai

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Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111)

Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai
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  • Abstract views:  10691
  • PDF Downloads:  2469
  • Cited By: 0
Publishing process
  • Received Date:  06 December 2005
  • Accepted Date:  27 December 2005
  • Published Online:  05 March 2006

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