Investigation of high hole concentration Mg-doped InGaN epilayer
Acta Physica Sinica
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Acta Phys. Sin.  2006, Vol. 55 Issue (9): 4951-4955    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Investigation of high hole concentration Mg-doped InGaN epilayer
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Li Tong, Xing Yan-Hui, Han Jun, Guo Xia, Shen Guang-Di
北京工业大学电子信息与控制工程学院,北京市光电子技术实验室,北京 100022
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