The influence of distribution of Na+ -dopant on the structure and dielectric properties of Ba0.25 Sr0.75 TiO3 thin film
Zhai Ji-Wei1 , Yao Xi1 , Zhou Qi-Gang2
(1)同济大学 功能材料研究所,上海 200092; (2)同济大学功能材料研究所,上海 200092；乐山师范学院物理与电子信息科学系,四川乐山 614004
Abstract Na+ -doped and compositional graded doped Ba0.25 Sr0.75 TiO3 thin films were grown on Pt/Ti/SiO2 /Si substrates by Sol-Gel technique. The dielectric properties of thin films were investigated as a function of Na+ doping level. It is revealed that with the increase of Na+ concentrations both the dielectric constant and the loss decrease continuously while the leakage current initially decreases (Na+ < 2.5mol%) and then increases. The increase of leakage current may be caused by the formation of porous structure which was confirmed by field emission scanning microscopy (FE-SEM). The improvement of overall dielectric properties were achieved by using the compositional graded doping which results in a better microstructure in the film.
Key words ：
BST thin film
doping
sol-gel technique
dielectric property
Received: 2007-03-19
Published: 2007-11-20
Cite this article:
Zhou Qi-Gang,Zhai Ji-Wei,Yao Xi. The influence of distribution of Na+ -dopant on the structure and dielectric properties of Ba0.25 Sr0.75 TiO3 thin film. Acta Phys. Sin., 2007, 56(11): 6666-6673.
URL:
http://wulixb.iphy.ac.cn/CN/Y2007/V56/I11/6666
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2007, Vol. 56 
