Effect of O<sub>2</sub>-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma
Acta Physica Sinica
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Acta Phys. Sin.  2007, Vol. 56 Issue (2): 1172-1176    
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Effect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma
Liang Rong-Qing1, Wei Yong-Xia2, Qian Xiao-Mei2, Yu Xiao-Zhu2, Ye Chao2, Ning Zhao-Yuan2
(1)复旦大学现代物理研究所,上海 200433; (2)苏州大学物理科学与技术学院,江苏省薄膜材料实验室,苏州 215006
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