The effect of radiation induced strain relaxation on electric performance of Al<sub><i>m</i></sub>Ga<sub><i>1-m</i></sub>N/GaN HEMT
Acta Physica Sinica
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Acta Phys. Sin.  2007, Vol. 56 Issue (6): 3393-3399    
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
The effect of radiation induced strain relaxation on electric performance of AlmGa1-mN/GaN HEMT
Fan Long1, Hao Yue2
(1)北京时代民芯科技有限公司,北京 100076; (2)宽禁带半导体材料与器件教育部重点实验室,西安电子科技大学,西安 710071
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