Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy
Acta Physica Sinica
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Acta Phys. Sin.  2007, Vol. 56 Issue (7): 4113-4116    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy
Xu Jin1, Li Fu-Long1, Yang De-Ren2
(1)厦门大学化学化工学院材料科学与工程系, 厦门 361005; (2)浙江大学硅材料国家重点实验室, 杭州 310027
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