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The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dot

Cai Cheng-Yu Zhou Wang-Min

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The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dot

Cai Cheng-Yu, Zhou Wang-Min
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  • The dependence of total strain energy of a pyramidal self-assembled Ge/Si semiconductor quantum dot on the aspect ratio, is investigated. The free energy consisting of the strain energy and surface energy is defined, and used to study the equilibrium shape of the systems. The results show that the strain energy of thesystem decreases with the increasing aspect ratio, and under the requirement ofminimum total free energy, the quantum dot with a given volume will take a particular height-to-width aspect ratio,i.e.the equilibrium aspect ratio. Meanwhile, the distributions of the stress, hydrostatic strain and biaxial strain are presented. These can serve as a basis for interpretation of experiments on strain self-assembled quantum dots.
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  • Abstract views:  7807
  • PDF Downloads:  1142
  • Cited By: 0
Publishing process
  • Received Date:  21 September 2006
  • Accepted Date:  08 March 2007
  • Published Online:  05 April 2007

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