Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness
Acta Physica Sinica
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Acta Phys. Sin.  2007, Vol. 56 Issue (8): 4955-4959    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness
Gao Hong-Ling1, Li Dong-Lin1, Wang Bao-Qiang1, Zhu Zhan-Ping1, Zeng Yi-Ping1, Zhou Wen-Zheng2, Shang Li-Yan2
(1)中国科学院半导体研究所,北京 100083; (2)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083
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