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Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness

Gao Hong-Ling Li Dong-Lin Zhou Wen-Zheng Shang Li-Yan Wang Bao-Qiang Zhu Zhan-Ping Zeng Yi-Ping

Citation:

Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness

Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping
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  • Abstract views:  7958
  • PDF Downloads:  1120
  • Cited By: 0
Publishing process
  • Received Date:  30 August 2006
  • Accepted Date:  25 January 2007
  • Published Online:  05 April 2007

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