In this paper, we present some experimental results of the KP 500 thyristor which are fabricated by using silicon organic compounds and metal oxides type isolation material. Investigation on the principles of quality control of the semiconductor devices is also reported. The technique was based on coating the device surfaces with the mixture of high purity silicon organic compounds and metal oxides at a proper mixing ratio to protect the semiconductor p-n junction surface aswell as to control the characteristic properties. At room temperature, the resistivity of the solid isolation protective material ρ>7.5×1015Ω·cm, its dielectric constant is equal to 4.7, and the breakdown voltage V>16kV/mm. We demonstrated the advantages of using this material on KP500 thyristor by significantly improving its surface properties, reducing the leakage current and increasing its voltage breakdown level.
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