A new partial SOI high voltage device with double-faced step buried oxide structure
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2008, Vol. 57 Issue (10): 6565-6570    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
A new partial SOI high voltage device with double-faced step buried oxide structure
Zhang Bo1, Li Zhao-Ji1, Li Qi2
(1)电子科技大学IC设计中心,成都 610054; (2)桂林电子科技大学信息与通信学院,桂林 541004;电子科技大学IC设计中心,成都 610054
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn