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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
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Wu Jun-Bo, Tang Xin-Gui, Jia Zhen-Hua, Chen Dong-Ge, Jiang Yan-Ping, Liu Qiu-Xiang. Influences of Y- and La-dopant on the thermal conductive properties and dielectric relaxation of Al2O3-based ceramics. Acta Physica Sinica,
2012, 61(20): 207702.
doi: 10.7498/aps.61.207702
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Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET. Acta Physica Sinica,
2012, 61(21): 217304.
doi: 10.7498/aps.61.217304
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica,
2011, 60(12): 127901.
doi: 10.7498/aps.60.127901
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
doi: 10.7498/aps.59.1258
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Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou. Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica,
2009, 58(10): 7211-7215.
doi: 10.7498/aps.58.7211
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Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica,
2008, 57(5): 3176-3181.
doi: 10.7498/aps.57.3176
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
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Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica,
2008, 57(4): 2562-2566.
doi: 10.7498/aps.57.2562
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Liao Guo-Jin, Yan Shao-Feng, Ba De-Chun. The blue luminescence of cerium doped aluminum oxide thin film. Acta Physica Sinica,
2008, 57(11): 7327-7332.
doi: 10.7498/aps.57.7327
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica,
2007, 56(6): 3453-3457.
doi: 10.7498/aps.56.3453
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
doi: 10.7498/aps.56.5513
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Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica,
2007, 56(5): 2900-2904.
doi: 10.7498/aps.56.2900
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Song Yin, Wang Zhi-Guang, Wei Kong-Fang, Zhang Chong-Hong, Liu Chun-Bao, Zang Hang, Zhou Li-Hong. Effects of annealing on the photoluminescence of He ion implanted sapphire after 230 MeV Pb ion irradiation. Acta Physica Sinica,
2007, 56(1): 551-555.
doi: 10.7498/aps.56.551
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Zhou Xian-Ming, Wang Xiao-Song, Li Sai-Nan, Li Jun, Li Jia-Bo, Jing Fu-Qian. Optical transparency of z-cut LiF, Al2O3 and LiTaO3 single crystals under strong shock compression. Acta Physica Sinica,
2007, 56(8): 4965-4970.
doi: 10.7498/aps.56.4965
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica,
2007, 56(3): 1621-1626.
doi: 10.7498/aps.56.1621
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
doi: 10.7498/aps.55.2476
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
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Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua. A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica,
2005, 54(9): 4273-4278.
doi: 10.7498/aps.54.4273
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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica,
2005, 54(11): 5450-5454.
doi: 10.7498/aps.54.5450
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