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Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Lei Shuang-Ying Shen Bo Zhang Guo-Yi

Citation:

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Lei Shuang-Ying, Shen Bo, Zhang Guo-Yi
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  • Abstract views:  7652
  • PDF Downloads:  1022
  • Cited By: 0
Publishing process
  • Received Date:  18 July 2007
  • Accepted Date:  06 September 2007
  • Published Online:  05 February 2008

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