Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (4): 2450-2455    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model
Yang Rui-Xia1, Xu Na-Ying1, Li Ruo-Fan2, Ma Yong-Qiang3, Wu Yi-Bin4, Zhang Zhi-Guo4
(1)河北工业大学信息工程学院,天津 300130; (2)河北工业大学信息工程学院,天津 300130;中国电子科技集团公司第十三研究所,石家庄 050051; (3)河北工业大学信息工程学院,天津 300130;中国电子科技集团公司第十三研究所,石家庄 050051;河北工程大学信息与电气工程学院,邯郸 056038; (4)中国电子科技集团公司第十三研究所,石家庄 050051
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