A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (4): 2548-2553    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector
Zhao De-Gang1, Zhou Mei2, Chang Qing-Ying2
(1)中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083; (2)中国农业大学应用物理系,北京 100083
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