Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (5): 3176-3181    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate
Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan
南昌大学教育部发光材料与器件工程研究中心,南昌 330047;晶能光电(江西)有限公司,南昌 330096
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