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Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

Xiong Chuan-Bing Jiang Feng-Yi Fang Wen-Qing Wang Li Mo Chun-Lan

Citation:

Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan
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  • Abstract views:  7227
  • PDF Downloads:  1659
  • Cited By: 0
Publishing process
  • Received Date:  18 September 2007
  • Accepted Date:  24 October 2007
  • Published Online:  28 May 2008

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