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Jiang Yan-Bo, Liu Wen-Bo, Sun Zhi-Peng, La Yong-Xiao, Yun Di. Phase-field simulation of void evolution in UO2 under applied stress. Acta Physica Sinica,
2022, 71(2): 026103.
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Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica,
2018, 67(2): 027101.
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2015, 64(12): 127303.
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2015, 64(5): 054601.
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2015, 64(17): 176601.
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2013, 62(6): 068502.
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2012, 61(20): 206601.
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2012, 61(1): 018501.
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2012, 61(24): 248501.
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2010, 59(6): 4395-4402.
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2009, 58(11): 7716-7721.
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2009, 58(4): 2625-2630.
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2008, 57(10): 6545-6550.
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2007, 56(12): 7176-7182.
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2007, 56(11): 6674-6679.
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Zhang Wen-Jie, Yi Wan-Bing, Wu Jin. Electromigration in Al interconnects and the challenges in ultra-deep submicron technology. Acta Physica Sinica,
2006, 55(10): 5424-5434.
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Zong Zhao-Xiang, Du Lei, Zhuang Yi-Qi, He Liang, Wu Yong. Modeling of resistance changes based on the free volume in VLSI interconnection electromigration. Acta Physica Sinica,
2005, 54(12): 5872-5878.
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Liu Hong-Xia, Zheng Xue-Feng, Hao Yue. Generation mechanism of stress induced leakage current in flash memory cell. Acta Physica Sinica,
2005, 54(12): 5867-5871.
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