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2021, 70(15): 156101.
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2010, 59(1): 550-554.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2009, 58(1): 494-497.
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Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi. Study of conductive property for a N-VDMOS interface trap under X-ray radiation. Acta Physica Sinica,
2008, 57(3): 1872-1877.
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Li Ruo-Fan, Yang Rui-Xia, Wu Yi-Bin, Zhang Zhi-Guo, Xu Na-Ying, Ma Yong-Qiang. Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model. Acta Physica Sinica,
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Li Zhong-He, Liu Hong-Xia, Hao Yue. Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica,
2006, 55(2): 820-824.
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
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Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2003, 52(10): 2553-2557.
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