Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (7): 4487-4491    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing
Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue
西安电子科技大学微电子学院,宽禁带半导体技术重点实验室,西安 710071
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