Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/<i>f</i> noise
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (8): 5205-5211    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise
Peng Shao-Quan1, Du Lei1, He Liang1, Chen Wei-Hua1, Zhuang Yi-Qi2, Bao Jun-Lin2
(1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学微电子学院,西安 710071
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