Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise
Peng Shao-Quan1 , Du Lei1 , He Liang1 , Chen Wei-Hua1 , Zhuang Yi-Qi2 , Bao Jun-Lin2
(1)西安电子科技大学技术物理学院，西安 710071; (2)西安电子科技大学微电子学院，西安 710071
Abstract Based on metal-oxide-semiconductor field effect transistor (MOSFET) noise theory of carrier number fluctuation and mobility fluctuation， a quantitative mathematic model between pre-irradiation 1/f noise parameters and post-irradiation threshold voltage drift due to oxide traps and interface traps is established. It agrees well with the experimental results. This model shows that 1/f noise in MOSFET is priginates from the random trapping/detrapping processes between oxide traps and the channel， which causes fluctuations in both the number and the mobility of channel carriers. So pre-irradiation 1/f noise magnitude is directly proportional to post-irradiation oxide-trap charge. The results not only explain the correlation between MOSFET pre-irradiation 1/f noise power spectral density and radiation degradation in theory， but also provide the theory for forecasting MOSFET radiation-resistant capability.
Key words ：
1/f noise
radiation
metal-oxide-semiconductor field effect transistor
traps
Received: 2007-09-28
Published: 2008-08-20
Cite this article:
Peng Shao-Quan,Du Lei,Zhuang Yi-Qi et al. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Phys. Sin., 2008, 57(8): 5205-5211.
URL:
http://wulixb.iphy.ac.cn/CN/Y2008/V57/I8/5205
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2008, Vol. 57 
