Fabrication and <i>I</i>-<i>V</i> characteristics of ZnO nanowire-based field effect transistors
Acta Physica Sinica
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Acta Phys. Sin.  2008, Vol. 57 Issue (9): 5887-5892    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors
Qiao Shuang-Shuang1, Yang Zhi2, Zhang Wei3, Li Meng-Ke3, Wei Qiang3, Cao Lu3
(1)大连理工大学物理与光电工程学院,大连 116024; (2)兰州大学化学系,兰州 730000; (3)辽宁师范大学物理与电子技术学院,大连 116029
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