The Raman shifts of Si—Si， Ge—Ge and Si—Ge in Si（1-x）Gex alloys are calculated by Keating model. The calculated Raman shifts are 40275，41339 and 38815 cm-1 when the concentrations of Ge are 01， 05 and 09 respectively. These results are consistent with the reported experimental results， which indicates the validity of the Keating model for obtaining the Raman frequency of strained materials by changing the elastic coefficients of stretching and compression and bond-bending interaction. The single-phonon scattering peak at 477029 cm-1 in amorphous silicon is obtained for the first time by Keating model, which is in agreement with the result of 4800 cm-1 from the literature, indicating that the atoms of amorphous silicon as a whole are stretched compared with that of crystalline silicon.
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