Effect of hydrogenation on the luminescence evolution of GaN under low energy electron beam irradiation
Acta Physica Sinica
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Acta Phys. Sin.  2009, Vol. 58 Issue (11): 7864-7868    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Effect of hydrogenation on the luminescence evolution of GaN under low energy electron beam irradiation
Dierre Benjamin1, Sekiguchi Takashi1, Wang Yan2, Shen Bo2, Xu Fu-Jun2
(1)Advanced Electronic Materials Center,National Institute for Materials Science,Namiki 1-1,Tsukuba 305-0044,Japan; (2)北京大学物理学院人工微结构和介观物理国家重点实验室,北京 100871
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