Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
Acta Physica Sinica
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Acta Phys. Sin.  2009, Vol. 58 Issue (11): 7952-7957    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui
中国科学院半导体研究所集成光电子国家重点联合实验室,北京 100083
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