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Yu Jia-Cheng, Zhong Jia-Yong, An Wei-Ming, Ping Yong-Li. Potential distribution behind target in intense and short pulsed laser-driven magnetic reconnection. Acta Physica Sinica,
2021, 70(6): 065201.
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Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin. Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2014, 63(23): 236102.
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica,
2014, 63(23): 237302.
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Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica,
2014, 63(14): 148502.
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Zhao Qing-Kai, Chen Xiao-Gang, Cui Ji-Feng. Electrostatic potential distribution of high-order weakly nonlinear composites under external direct current electric field. Acta Physica Sinica,
2013, 62(10): 107201.
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica,
2013, 62(10): 108501.
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu. Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica,
2013, 62(7): 077103.
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Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu. A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica,
2012, 61(4): 047303.
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Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica,
2012, 61(10): 107301.
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Li Li, Liu Hong-Xia, Yang Zhao-Nian. Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica,
2012, 61(16): 166101.
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Cao Lei, Liu Hong-Xia, Wang Guan-Yu. Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica,
2012, 61(1): 017105.
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Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu. A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET. Acta Physica Sinica,
2011, 60(5): 058501.
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Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong. Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica,
2011, 60(5): 058502.
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Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin. Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica,
2011, 60(7): 077106.
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2011, 60(1): 017202.
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Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor. Acta Physica Sinica,
2010, 59(12): 8877-8882.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2009, 58(1): 494-497.
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
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Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng. 2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica,
2006, 55(7): 3670-3676.
doi: 10.7498/aps.55.3670
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E. An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica,
2005, 54(2): 897-901.
doi: 10.7498/aps.54.897
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