Model of hole effective mass of strained Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>/(111)Si
Acta Physica Sinica
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Acta Phys. Sin.  2010, Vol. 59 Issue (1): 579-582    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Model of hole effective mass of strained Si1-xGex/(111)Si
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying
西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071
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