Threshold voltage analytical model for strained Si SOI MOSFET with high-<i>k</i> dielectric
Acta Physica Sinica
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Acta Phys. Sin.  2010, Vol. 59 Issue (11): 8131-8136    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education,School of Microelectronics,Xidian University,Xi'an 710071,China
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