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Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

Liu Hong-Xia Yin Xiang-Kun Liu Bing-Jie Hao Yue

Citation:

Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue
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  • Abstract views:  7316
  • PDF Downloads:  862
  • Cited By: 0
Publishing process
  • Received Date:  12 March 2010
  • Accepted Date:  18 June 2010
  • Published Online:  05 June 2010

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