Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2010, Vol. 59 Issue (12): 8877-8882    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor
Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn