Effects of AlGaN layer parameter on ultraviolet response of n<sup>+</sup>-GaN/i-Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N/n<sup>+</sup>-GaN structure ultraviolet-infrared photodetector
Acta Physica Sinica
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Acta Phys. Sin.  2010, Vol. 59 Issue (12): 8903-8909    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector
Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
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