Improved properties of light emitting diode by rough p-GaN grown at lower temperature
Acta Physica Sinica
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Acta Phys. Sin.  2010, Vol. 59 Issue (2): 1233-1236    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Improved properties of light emitting diode by rough p-GaN grown at lower temperature
Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di
北京工业大学电子信息与控制工程学院,北京 100124
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