The improvement on total ionizing dose (TID) effects of the ultra-deep submicron MOSFET featuring delta doping profiles
Acta Physica Sinica
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Acta Phys. Sin.  2010, Vol. 59 Issue (3): 1970-1976    
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The improvement on total ionizing dose (TID) effects of the ultra-deep submicron MOSFET featuring delta doping profiles
Lu Qing1, Wang Wen-Hua1, An Xia1, Huang Ru1, Wang Si-Hao2
(1)北京大学微电子学深圳研究院,集成微系统重点实验室,北京 100871; (2)北京大学微电子学深圳研究院,集成微系统重点实验室,北京 100871;长春理工大学,微电子系,长春 130022
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