Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors

Liu Jing; Zheng Wei-Min; Song Ying-Xin; Chu Ning-Ning; Li Su-Mei; Cong Wei-Yan

doi:10.7498/aps.59.2728

Abstract

GaAs/AlAs triple-quantum-well samples were grown by molecular beam epitaxy, and the middle GaAs quantum-well layer was delta-doped at the well centre with Be shallow acceptors. Then the far-infrared Teraherz prototype emitter was fabricated using the samples. Electroluminescence (EL) and current-voltage characteristics (I-V) were measured at 4.5 K. In the EL spectrum, a wide peak was observed clear 222 cm-1, which is attributed to the Be acceptor’s radiative transitions from the excited odd-parity states to the ground state. Nevertheless, the emission signal was weakened by non-radiative relaxation processes. In the I-V curve, the negative differential resistance characteristic at the position of 0.72 and 1.86 V was also observed clearly. This is attributed to the resonant tunneling between Be acceptor 1s3/2(Γ6+Γ7) energy level in the middle quantum-well and the HH1 band in the left-side non-doping quantum-well, as well as the resonant tunneling between the HH band in the right-side non-doping quantum-well and Be acceptor 2p5/2(Γ6+Γ7) energy level.

Keywords:

Authors and contacts

1.
山东大学威海分校空间科学与物理学院，威海 264209

References

[1]	［1］Ma S H, Shi Y L, Xu X L, Yan W, Yang Y P, Wang L 2006 Acta Phys. Sin. 55 4091 (in Chinese) ［马士华、施宇蕾、徐新龙、严伟、杨玉平、汪力 2006 物理学报 55 4091］
[2]	［2］Zhang X B, Shi W 2008 Acta Phys. Sin. 57 4984 (in Chinese) ［张显斌、施卫 2008 物理学报 57 4984］
[3]	［3］Lafaye D G, Boucaud P, Julien F H, Prazeres R, Glotin F, Ortega J M, Thierry-Mieg V, Planel R 1997 Appl. Phys. Lett. 70 3197
[4]	［4］Muravjov A V, Withers S H, Pavlov S G, Shastin V N, Peale R E 1999 J. Appl. Phys. 86 3512
[5]	［5］Zhang T Y, Zhao W 2008 Chin. Phys. B 17 4285
[6]	［6］Xu G Y, Li A Z 2007 Acta Phys. Sin. 56 500 (in Chinese) ［徐刚毅、李爱珍 2007 物理学报 56 500］
[7]	［7］Lin G J, Zhou Z W, Lai H K, Li C, Chen S Y, Yu J Z 2007 Acta Phys. Sin. 56 4137 (in Chinese) ［林桂江、周志文、赖虹凯、李成、陈松岩、余金中 2007 物理学报 56 4137］
[8]	［8］Ting D Z, Chang Y C, Bandara S V, Gunapala S D 2007 Appl. Phys. Lett. 91 073510
[9]	［9］MujagiDc＇ E, Austerer M, Schartner S, Nobile M, Hoffmann L K, Schrenk W, Strasser G, Semtsiv M P, Bayrakli I, Wienold M, Masselink W T 2008 J. Appl. Phys. 103 033104
[10]	］Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015
[11]	］Harrison P, Halsall M P, Zheng W M 2002 Mater. Sci. Forum 384—385 165
[12]	］Harrison P, Kelsall R W 1997 J. Appl. Phys. 81 7135
[13]	］Halsall M P, Harrison P, Wells J P R, Bradley I V, Pellemans H 2001 Phys. Rev. B 63 155314
[14]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2002 J. Appl. Phys. 92 6039
[15]	］Orlova E E, Harrison P, Zhang W M, Halsall M P 2005 Semiconductors 39 67
[16]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2004 Appl. Phys. Lett. 84 735
[17]	］Seliuta D, ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite G, Grigelionis I, Balakauskas S, ValuDsˇis G, Sherliker B, Sherliker B, Halsall M P, Lachab M, Khanna S P, Harrison P, Linfieldc E H 2008 Acta Phys. Pol. A 113 909
[18]	］Huber R, Kaindl R A, Schmid B A, Chemla D S 2005 Phys. Rev. B 72 161314
[19]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ValuDsˇis G, Halsall M P, Steer M J, Harrison P 2005 J. Appl. Phys. 98 023508
[20]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ASˇUirmulis E, Devenson J, ValuAsˇis G, Sherliker B, Halsall M P, Steer M J, Harrison P 2005 Acta Phys. Pol. A 107 328
[21]	］Kundrotas J, ACˇUerDsˇkus A, ValuDsˇis G, Lachab M, Khanna S P, Harrison P, Linfield E H 2008 J. Appl. Phys. 103 123108
[22]	］Holtz P O, Sundaram M, Doughty K, Merz J L, Gossard A C 1989 Phys. Rev. B 40 12338
[23]	］Missous M 1995 J. Appl. Phys. 78 4467
[24]	］Zheng W M, Halsall M P, Harrison P, Steer M J 2006 Sci. China Ser. G 49 702
[25]	］Masselink W T, Chung C Y, Morkoc H 1985 Phys.Rev. B 32 5190
[26]	］Zheng W M, Halsall M P, Harrison P, Wells J P R, Bradley I V, Steer M J 2003 Appl. Phys. Lett. 83 3719
[27]	］Reeder A A, McCombe B D, Chambers F A, Devane G P 1988 Phys. Rev. B 38 4318
[28]	］Xia J B, Huang K 1988 Acta Phys. Sin. 37 1 (in Chinese) ［夏建白、黄昆 1988 物理学报 37 1］

Cited By

[1]	［1］Ma S H, Shi Y L, Xu X L, Yan W, Yang Y P, Wang L 2006 Acta Phys. Sin. 55 4091 (in Chinese) ［马士华、施宇蕾、徐新龙、严伟、杨玉平、汪力 2006 物理学报 55 4091］
[2]	［2］Zhang X B, Shi W 2008 Acta Phys. Sin. 57 4984 (in Chinese) ［张显斌、施卫 2008 物理学报 57 4984］
[3]	［3］Lafaye D G, Boucaud P, Julien F H, Prazeres R, Glotin F, Ortega J M, Thierry-Mieg V, Planel R 1997 Appl. Phys. Lett. 70 3197
[4]	［4］Muravjov A V, Withers S H, Pavlov S G, Shastin V N, Peale R E 1999 J. Appl. Phys. 86 3512
[5]	［5］Zhang T Y, Zhao W 2008 Chin. Phys. B 17 4285
[6]	［6］Xu G Y, Li A Z 2007 Acta Phys. Sin. 56 500 (in Chinese) ［徐刚毅、李爱珍 2007 物理学报 56 500］
[7]	［7］Lin G J, Zhou Z W, Lai H K, Li C, Chen S Y, Yu J Z 2007 Acta Phys. Sin. 56 4137 (in Chinese) ［林桂江、周志文、赖虹凯、李成、陈松岩、余金中 2007 物理学报 56 4137］
[8]	［8］Ting D Z, Chang Y C, Bandara S V, Gunapala S D 2007 Appl. Phys. Lett. 91 073510
[9]	［9］MujagiDc＇ E, Austerer M, Schartner S, Nobile M, Hoffmann L K, Schrenk W, Strasser G, Semtsiv M P, Bayrakli I, Wienold M, Masselink W T 2008 J. Appl. Phys. 103 033104
[10]	］Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015
[11]	］Harrison P, Halsall M P, Zheng W M 2002 Mater. Sci. Forum 384—385 165
[12]	］Harrison P, Kelsall R W 1997 J. Appl. Phys. 81 7135
[13]	］Halsall M P, Harrison P, Wells J P R, Bradley I V, Pellemans H 2001 Phys. Rev. B 63 155314
[14]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2002 J. Appl. Phys. 92 6039
[15]	］Orlova E E, Harrison P, Zhang W M, Halsall M P 2005 Semiconductors 39 67
[16]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2004 Appl. Phys. Lett. 84 735
[17]	］Seliuta D, ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite G, Grigelionis I, Balakauskas S, ValuDsˇis G, Sherliker B, Sherliker B, Halsall M P, Lachab M, Khanna S P, Harrison P, Linfieldc E H 2008 Acta Phys. Pol. A 113 909
[18]	］Huber R, Kaindl R A, Schmid B A, Chemla D S 2005 Phys. Rev. B 72 161314
[19]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ValuDsˇis G, Halsall M P, Steer M J, Harrison P 2005 J. Appl. Phys. 98 023508
[20]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ASˇUirmulis E, Devenson J, ValuAsˇis G, Sherliker B, Halsall M P, Steer M J, Harrison P 2005 Acta Phys. Pol. A 107 328
[21]	］Kundrotas J, ACˇUerDsˇkus A, ValuDsˇis G, Lachab M, Khanna S P, Harrison P, Linfield E H 2008 J. Appl. Phys. 103 123108
[22]	］Holtz P O, Sundaram M, Doughty K, Merz J L, Gossard A C 1989 Phys. Rev. B 40 12338
[23]	］Missous M 1995 J. Appl. Phys. 78 4467
[24]	］Zheng W M, Halsall M P, Harrison P, Steer M J 2006 Sci. China Ser. G 49 702
[25]	］Masselink W T, Chung C Y, Morkoc H 1985 Phys.Rev. B 32 5190
[26]	］Zheng W M, Halsall M P, Harrison P, Wells J P R, Bradley I V, Steer M J 2003 Appl. Phys. Lett. 83 3719
[27]	］Reeder A A, McCombe B D, Chambers F A, Devane G P 1988 Phys. Rev. B 38 4318
[28]	］Xia J B, Huang K 1988 Acta Phys. Sin. 37 1 (in Chinese) ［夏建白、黄昆 1988 物理学报 37 1］

[1]	Zhu Wei-Jun, Chen Jin-Xin, Gao Yu-Han, Yang De-Ren, Ma Xiang-Yang. Electroluminescence from silicon-based light-emitting device with erbium-doped TiO₂ films: Enhancement effect of ytterbium codoping. Acta Physica Sinica, 2019, 68(12): 124204. doi: 10.7498/aps.68.20190300
[2]	Yi You-Gen, Wang Yu-Ying, Hu Qi-Feng, Zhang Yan-Bin, Peng Yong-Yi, Lei Hong-Wen, Peng Li-Ping, Wang Xue-Min, Wu Wei-Dong. Structural and photoluminescence characteristics of ZnCdO/ZnO single quantum well. Acta Physica Sinica, 2016, 65(5): 057802. doi: 10.7498/aps.65.057802
[3]	Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801. doi: 10.7498/aps.64.107801
[4]	Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui. Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica, 2014, 63(3): 037801. doi: 10.7498/aps.63.037801
[5]	He Yue-Di, Xu Zheng, Zhao Su-Ling, Liu Zhi-Min, Gao Song, Xu Xu-Rong. Electroluminescent energy transfer of hybrid quantum dotsdevice. Acta Physica Sinica, 2014, 63(17): 177301. doi: 10.7498/aps.63.177301
[6]	Liu Bo-Zhi, Li Rui-Feng, Song Ling-Yun, Hu Lian, Zhang Bing-Po, Chen Yong-Yue, Wu Jian-Zhong, Bi Gang, Wang Miao, Wu Hui-Zhen. QD-LED devices using ZnSnO as an electron-transporting layer. Acta Physica Sinica, 2013, 62(15): 158504. doi: 10.7498/aps.62.158504
[7]	Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue. Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102. doi: 10.7498/aps.60.068102
[8]	Zhu Hai-Na, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Kong Chao, Yan Guang, Gong Wei. Influence of well structure on efficiency of organic light-emitting diodes. Acta Physica Sinica, 2010, 59(11): 8093-8097. doi: 10.7498/aps.59.8093
[9]	Song Ying-Xin, Zheng Wei-Min, Liu Jing, Chu Ning-Ning, Li Su-Mei. Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells. Acta Physica Sinica, 2009, 58(9): 6471-6476. doi: 10.7498/aps.58.6471
[10]	Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica, 2008, 57(12): 7860-7864. doi: 10.7498/aps.57.7860
[11]	Zhang Guo-Hui, Hua Yu-Lin, Wu Xiao-Ming, Yin Shou-Gen, Niu Xia, Hui Juan-Li, Wang Yu, Zhang Li-Juan. Fabrication of a new organic multilayer phosphorescent white-light-emitting device and evaluation of its characteristics. Acta Physica Sinica, 2007, 56(9): 5408-5412. doi: 10.7498/aps.56.5408
[12]	Suo Fan, Yu Jun-Sheng, Deng Jing, Jiang Ya-Dong, Wang Rui, Wang Wei-Zhi, Liu Tian-Xi. Electroluminescence characteristics of a blend system based on a novel fluorene-carbazole copolymer and PVK doping system. Acta Physica Sinica, 2007, 56(11): 6685-6690. doi: 10.7498/aps.56.6685
[13]	Nie Hai, Zhang Bo, Tang Xian-Zhong. Electroluminescence of polymer doped small-molecules light-emitting diodes and the effects of doping trap. Acta Physica Sinica, 2007, 56(1): 263-267. doi: 10.7498/aps.56.263
[14]	Jiang Yan, Yang Sheng-Yi, Zhang Xiu-Long, Teng Feng, Xu Zheng, Hou Yan-Bing. ZnSe-based organic-inorganic heterostructure diodes. Acta Physica Sinica, 2006, 55(9): 4860-4864. doi: 10.7498/aps.55.4860
[15]	Zhang Peng, Zhou Yin-Hua, Liu Xiu-Fen, Tian Wen-Jing, Li Min, Zhang Guo. Study on the energy transfer and luminescent properties in PVK:DBVP blend system. Acta Physica Sinica, 2006, 55(10): 5494-5498. doi: 10.7498/aps.55.5494
[16]	Hou Lin-Tao, Hou Qiong, Peng Jun-Biao, Cao Yong. Performance of polymer light-emitting diodes with saturated red-emitting poly(fluorine-co-4,7-dithien-2-yl-2,1,3-benzothiadiazole-carbazole or triphenylamine). Acta Physica Sinica, 2005, 54(11): 5377-5381. doi: 10.7498/aps.54.5377
[17]	Zeng Zhong-Ming, Han Xiu-Feng, Du Guan-Xiang, Zhan Wen-Shan, Wang Yong, Zhang Ze. Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors. Acta Physica Sinica, 2005, 54(7): 3351-3356. doi: 10.7498/aps.54.3351
[18]	Zhu Wen-Qing, Wu You-Zhi, Zheng Xin-You, Jiang Xue-Yin, Zhang Zhi-Lin, Sun Run-Guang, Xu Shao-Hong. Multicomponent excited-state emissions in a bilayer organic electroluminescent device. Acta Physica Sinica, 2004, 53(7): 2325-2329. doi: 10.7498/aps.53.2325
[19]	XU XIU-LAI, XU ZHENG, HOU YAN-BING, SU YAN-MEI, XU XU-RONG. PREPARATION AND LUMINESCENT CHARACTERISTICS OF AN OXIDE PHOSPHOR Gd3G a5O12:Ag. Acta Physica Sinica, 2000, 49(7): 1390-1393. doi: 10.7498/aps.49.1390
[20]	SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA. ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica, 2000, 49(7): 1404-1408. doi: 10.7498/aps.49.1404

Catalog

Vol. 59, Issue 4 - 2010-02-20

Metrics

Abstract views: 7996
PDF Downloads: 1192
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板