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Starting from the Keating model, a semi-continuum atomistic lattice model, with directly taking into account the discrete nature in width and thickness direction, is proposed to calculate the elastic constants and Youngs modulus of single crystal silicon nanowires (SiNWs). Based on the six-band k·p theory and the deformation potential concept, and taking into account the quantum-size effect and spin-orbit coupling, a numerical model for the valence band structures of SiNWs in various transport orientations is established by using the finite difference method. Then we use a top-of-the-barrier ballistic field-effect transistor (FET) model to investigate the effects of the uniaxial stress and the elastic constants on ballistic transport properties of the p-type SiNW FETs in combination with the calculation results from the two models mentioned above. It is found that the elastic constants and Youngs modulus of the SiNW are highly size-dependent, which is in good agreement with the available molecular dynamics result. Furthermore, our calculations indicate that the effect of size-dependent elastic constants on ballistic transport current of the SiNW FET strongly depends on the effect of the uniaxial stress on ballistic transport current, because when the uniaxial stress induces a significant change in valence band structures of SiNWs, the size-dependent elastic constants can obviously modify the valence band structure.
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Keywords:
- strain silicon nanowire /
- elastic constant /
- ballistic current /
- valence-band structure model
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[6] ［6］Tabib-Azar M, Nassirou M, Wang R, Sharma S, Kamins T I, Saif Islam M, Stanley Williams R 2005 Appl. Phys. Lett. 87 113102
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[13] ］Neophytou N, Paul A, Lundstrom M S, Klimeck G 2008 IEEE Trans. Electron Dev. 55 1286
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[15] ］Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[16] ］Keating P N 1966 Phys. Rev. 145 637
[17] ］Sun C T, Zhang H T 2003 J. Appl. Phys. 93 1212
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[19] ］Seo W H, Donegan J F 2003 Phys. Rev. B 18 075318
[20] ］Zhang J H, Huang Q A, Yu H, Lei S Y 2008 Chin. Phys. B 17 4292
[21] ］Zhang J H, Huang Q A, Yu H, Wang J, Lei S Y 2009 J. Appl. Phys. 105 086102
[22] ］Cho K H, Yeo K H, Yeoh Y Y, Suk S D, Li M, Lee J M, Kim M S, Kim D W, Park D, Hong B H, Jung Y C, Hwang S W 2008 Appl. Phys. Lett. 92 052102
[23] ］Rahman A, Guo J, Datta S, Lundstrom M 2003 IEEE Trans. Electron Dev. 50 1853
[24] ］Wang J, Huang Q A, Yu H 2008 J. Phys. D 41 165406
[25] ］Wortman J J, Evans R A 1965 J. Appl. Phys. 36 153
[26] ］Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 ( in Chinese) ［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 7228］
[27] ］Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M 2005 Appl. Phys. Lett. 86 093113
[28] ］Marchi A, Gnani E, Reggiani S, Rudan M, Baccarani G 2006 Solid-State Electron. 50 78
[29] ］Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 ( in Chinese) ［宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英2009 物理学报 58 4958］
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[1] ［1］Cui Y, Zhong Z, Wang D, Wang W U, Lieber C M 2003 Nano Lett. 3 149
[2] ［2］Singh N, Agarwal A, Bera L K, Liow T Y, Yang R, Rustagi S C, Tung C H, Kumar R, Lo G Q, Balasubramanian N, Kwong D L 2006 IEEE Electron Dev. Lett. 27 383
[3] ［3］Toriyama T, Tanimoto Y, Sugiyama S 2002 J. Microelectromech. Syst. 11 605
[4] ［4］Feng X L, He R, Yang P, Roukes M L 2007 Nano Lett. 7 1953
[5] ［5］Li X X, Ono T, Wang Y L, Esashi M 2003 Appl. Phys. Lett. 83 3081
[6] ［6］Tabib-Azar M, Nassirou M, Wang R, Sharma S, Kamins T I, Saif Islam M, Stanley Williams R 2005 Appl. Phys. Lett. 87 113102
[7] ［7］Tang Z, Aluru N R 2006 Phys. Rev. B 74 235441
[8] ［8］Guo J G, Zhao Y P 2007 Nanotechnology 18 295701
[9] ［9］Kobayashi M, Hiramoto T 2008 J. Appl. Phys. 103 053709
[10] ］Seike A, Tange T, Sugiura Y, Tsuchida I, Ohta H, Watanabe T, Kosemura D, Ogura A, Ohdomari I 2007 Appl. Phys. Lett. 91 202117
[11] ］Svizhenko A, Leu P W, Cho K 2007 Phys. Rev. B 75 125417
[12] ］Ghetti A, Carnevale G, Rideau D 2007 IEEE Trans. Nanotechn. 6 659
[13] ］Neophytou N, Paul A, Lundstrom M S, Klimeck G 2008 IEEE Trans. Electron Dev. 55 1286
[14] ］Leu P W, Svizhenko A, Cho K 2008 Phys. Rev. B 77 235305
[15] ］Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[16] ］Keating P N 1966 Phys. Rev. 145 637
[17] ］Sun C T, Zhang H T 2003 J. Appl. Phys. 93 1212
[18] ］Zhang J H, Huang Q A, Yu H, Wang J 2009 J. Phys. D 42 045409
[19] ］Seo W H, Donegan J F 2003 Phys. Rev. B 18 075318
[20] ］Zhang J H, Huang Q A, Yu H, Lei S Y 2008 Chin. Phys. B 17 4292
[21] ］Zhang J H, Huang Q A, Yu H, Wang J, Lei S Y 2009 J. Appl. Phys. 105 086102
[22] ］Cho K H, Yeo K H, Yeoh Y Y, Suk S D, Li M, Lee J M, Kim M S, Kim D W, Park D, Hong B H, Jung Y C, Hwang S W 2008 Appl. Phys. Lett. 92 052102
[23] ］Rahman A, Guo J, Datta S, Lundstrom M 2003 IEEE Trans. Electron Dev. 50 1853
[24] ］Wang J, Huang Q A, Yu H 2008 J. Phys. D 41 165406
[25] ］Wortman J J, Evans R A 1965 J. Appl. Phys. 36 153
[26] ］Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 ( in Chinese) ［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 7228］
[27] ］Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M 2005 Appl. Phys. Lett. 86 093113
[28] ］Marchi A, Gnani E, Reggiani S, Rudan M, Baccarani G 2006 Solid-State Electron. 50 78
[29] ］Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 ( in Chinese) ［宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英2009 物理学报 58 4958］
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