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| Fabrication and performance of indium oxide based transparent thin film transistors |
| Wu Hui-Zhen1, Zhang Ying-Ying1, Wang Xiong1, Zhu Xia-Ming1, Yuan Zi-Jian1, Xu Tian-Ning2 |
| (1)State Key Laboratory for Modern Optical Instruments, Department of Physics, Zhejiang University, Hangzhou 310027, China; (2)State Key Laboratory for Modern Optical Instruments, Department of Physics, Zhejiang University, Hangzhou 310027, China; Department of Science, Zhijiang College of Zhejiang University of Technology, Hangzhou 310024, China |
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Abstract Indium oxide thin film was deposited on glass substrate by radio frequency magnetron sputtering at room temperature. The In2O3 film was polycrystalline with a preferred (111) orientation and a grain size of 33 nm was estimated. The bottom-gate staggered thin film transistors (TFTs) were fabricated by standard photolithography, with In2O3 as active channel layers. The In2O3 TFTs exhibit good gate bias controlling characteristic with a field effect mobility of 6.3 cm2/V·s, an on-off current ratio of 3×103, and a threshold voltage of -0.9 V. Device performance and room temperature fabrication technology make In2O3 TFTs promising for display panel applications.
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Received: 24 July 2009
Published: 15 July 2010
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2010, Vol. 59 
