Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (1): 017303    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer
Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071,China
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