Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (1): 018502    
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Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED
Zhang Yun-Yan, Fan Guan-Han
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
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