High electron mobility lattice-matched InAlN/GaN materials
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (11): 117305     doi:10.7498/aps.60.117305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
High electron mobility lattice-matched InAlN/GaN materials
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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