Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (2): 027102    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor
Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan, Qu Jiang-Tao
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
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