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The hole concentration and strain relaxation degree in the diluted magnetic epitaxial film of GaMnAs are affected by the Mn concentration. The result from Raman scattering spectrum experiment has shown that the hole concentration in ultra-thin GaMnAs sample with Mn concentration of 3% is greater than that in sample with Mn concentration of 2% , while the hole concentration in sample with Mn concentration of 4% is less than that in sample with Mn concentration of 3%. Based on the theory of strain relaxation and investigation by HRXRD, it was indicated the samples with Mn concentration of 2% and 3% are in quasi-coherence or with low relaxation degree, respectively. On the other hand, the sample with Mn concentration of 4% obviously has a greater relaxation degree than that with 3% concentration. Therefore, it is suspected that the status of quasi-coherence or low relaxation degree hardly affects the hole concentration with the change of the Mn concentration. However, the strain relaxation status of large relaxation degree results in more defects in the epitaxial layer which affects the energy band and level thus decreases the hole concentration dramatically.
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Keywords:
- hole concentration /
- strain relaxation /
- reciprocal space map /
- quasi-coherent
[1] Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Lye Y 1996 Appl. Phys. Lett. 69 363
[2] Luo X D, Ji C J, Wang Y Q, Wang J N 2008 Acta Phys. Sin. 57 5277 (in Chinese) [罗向东、姬长建、王玉琦、王建农 2008 物理学报 57 5277]
[3] Yang W, Ji Y, Luo H H, Ruan X Z, Wang W Z, Zhao J H 2009 Acta Phys. Sin. 58 8560 (in Chinese) [杨 威、姬 扬、罗海辉、阮学忠、王玮竹、赵建华 2009 物理学报 58 8560]
[4] Gareev R R, Petukhov A, Schlapps M, Sadowski J, Wegscheider W 2010 Appl. Phys. Lett. 96 052114
[5] Zhou R, Sun B Q, Ruan X Z, Gan H D, Ji Y, Wang W Z, Zhao J H 2008 Acta Phys. Sin. 57 5244 (in Chinese) [周 蓉、孙宝权、阮学忠、甘华东、姬 扬、王玮竹、赵建华 2008 物理学报 57 5244]
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[10] Sadowski J, Domagala J Z 2004 Phys. Rev. B 69 075206
[11] Yoon I T, Kang T W 2009 Journal of Magnetism and Magnetic Materials 321 2257
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[13] Chen L, Yan S, Xu P F, Lu J, Wang W Z, Deng J J, Qian X, Ji Y, Zhao J H 2009 Appl. Phys. Lett. 95 182505
[14] Xu Z J 2007 Detection and Analysis of Semiconductor (2nd ed) (Beijing:Science Press) pp51—54 (in Chinese) [许振嘉 2007 半导体的检测与分析(第二版)(北京:科学出版社)第51—54页]
[15] Shioda R, Ando K, Hayashi T, Tanaka M 1998 Phys. Rev. B 58 1100
[16] Guo X G, Chen X S, Sun Y L, Zhou X H, Sun L Z, Lu W 2004 Acta Phys. Sin. 53 1516 (in Chinese) [郭旭光、陈效双、孙沿林、周孝好、孙立忠、陆 卫 2004 物理学报 53 1516]
[17] Liu X D, Wang W Z, Gao R X, Zhao J H, Wen J H, Lin W Z, Lai T S 2008 Acta Phys. Sin. 57 3857 (in Chinese) [刘晓东、王玮竹、高瑞鑫、赵建华、文锦辉、林位株、赖天树 2008 物理学报 57 3857]
[18] Lematre A, Miard A, Travers L, Mauguin O, Largeau L, Gourdon C, Jeudy V, Tran M, George J M 2008 Appl. Phys. Lett. 93 021123
[19] Maek J, Kudrnovsky J, Máca F, Sinova J, MacDonald A H , Campion R P, Gallagher B L, Jungwirth T 2007 Phys. Rev. B 75 045202
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[1] Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Lye Y 1996 Appl. Phys. Lett. 69 363
[2] Luo X D, Ji C J, Wang Y Q, Wang J N 2008 Acta Phys. Sin. 57 5277 (in Chinese) [罗向东、姬长建、王玉琦、王建农 2008 物理学报 57 5277]
[3] Yang W, Ji Y, Luo H H, Ruan X Z, Wang W Z, Zhao J H 2009 Acta Phys. Sin. 58 8560 (in Chinese) [杨 威、姬 扬、罗海辉、阮学忠、王玮竹、赵建华 2009 物理学报 58 8560]
[4] Gareev R R, Petukhov A, Schlapps M, Sadowski J, Wegscheider W 2010 Appl. Phys. Lett. 96 052114
[5] Zhou R, Sun B Q, Ruan X Z, Gan H D, Ji Y, Wang W Z, Zhao J H 2008 Acta Phys. Sin. 57 5244 (in Chinese) [周 蓉、孙宝权、阮学忠、甘华东、姬 扬、王玮竹、赵建华 2008 物理学报 57 5244]
[6] Ohya S, Ohno K, Tanaka M 2007 Appl. Phys. Lett. 90 112503
[7] Kuo C P, Vong S K, Cohen R M, Stringfellow G B 1985 J. Appl. Phys. 57 5428
[8] Dunstan D J 1997 Journal of Materials Science:Materials in Electronics 8 337
[9] Glunk M, Daeubler J, Dreher L, Schwaiger S, Schoch W, Sauer R, Limmer W, Brandlmaier A, Goennenwein S T B, Bihler C, Brandt M S 2009 Phys. Rev. B 79 195206
[10] Sadowski J, Domagala J Z 2004 Phys. Rev. B 69 075206
[11] Yoon I T, Kang T W 2009 Journal of Magnetism and Magnetic Materials 321 2257
[12] Seong M J, Chun S H, Cheong H M, Samarth N, Mascarenhas A 2002 Phys. Rev. B 66 033202
[13] Chen L, Yan S, Xu P F, Lu J, Wang W Z, Deng J J, Qian X, Ji Y, Zhao J H 2009 Appl. Phys. Lett. 95 182505
[14] Xu Z J 2007 Detection and Analysis of Semiconductor (2nd ed) (Beijing:Science Press) pp51—54 (in Chinese) [许振嘉 2007 半导体的检测与分析(第二版)(北京:科学出版社)第51—54页]
[15] Shioda R, Ando K, Hayashi T, Tanaka M 1998 Phys. Rev. B 58 1100
[16] Guo X G, Chen X S, Sun Y L, Zhou X H, Sun L Z, Lu W 2004 Acta Phys. Sin. 53 1516 (in Chinese) [郭旭光、陈效双、孙沿林、周孝好、孙立忠、陆 卫 2004 物理学报 53 1516]
[17] Liu X D, Wang W Z, Gao R X, Zhao J H, Wen J H, Lin W Z, Lai T S 2008 Acta Phys. Sin. 57 3857 (in Chinese) [刘晓东、王玮竹、高瑞鑫、赵建华、文锦辉、林位株、赖天树 2008 物理学报 57 3857]
[18] Lematre A, Miard A, Travers L, Mauguin O, Largeau L, Gourdon C, Jeudy V, Tran M, George J M 2008 Appl. Phys. Lett. 93 021123
[19] Maek J, Kudrnovsky J, Máca F, Sinova J, MacDonald A H , Campion R P, Gallagher B L, Jungwirth T 2007 Phys. Rev. B 75 045202
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