Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (3): 036106    
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Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array
Yu Xue-Feng1, Ren Di-Yuan1, Li Yu-Dong1, Gao Bo2, Cui Jiang-Wei2, Li Mao-Shun2, Li Ming2, Wang Yi-Yuan2
(1)Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; (2)Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Graduate School of Chinese Academy of Sciences, Beijing 100049, China
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