REmin), which is necessary for SiGe HBT thermal stability, is presented. Furthermore, non-uniform ballasting resistance design is given so as to further enhance the thermal stability of device. It is found that the surface temperature of the device decreases with the increase of Ge composition in SiGe base. This is because SiGe HBT internally possesses the thermal-electrical negative feedback. For the same dissipated power, the REmin decreases as Ge composition increases, which is beneficial to the improvment of the performance of radio frequancy(RF) power SiGe HBT. These results provide a good guide to further optimization of RF power SiGe HBT performance, especially thermal design."/>     Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (4): 044402    
ELECTROMAGENTISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Current Issue| Next Issue| Archive| Adv Search  |   
Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor
Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun
College of Electronic and Control Engineering, Beijing University of Technology, Beijing 100124, China
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