Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Shot noise measurement methods in electronic devices

Zhuang Yi-Qi Bao Jun-Lin Sun Peng Wang Ting-Lan Chen Wen-Hao Du Lei He Liang Chen Hua

Citation:

Shot noise measurement methods in electronic devices

Zhuang Yi-Qi, Bao Jun-Lin, Sun Peng, Wang Ting-Lan, Chen Wen-Hao, Du Lei, He Liang, Chen Hua
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • The limitations to shot noise measurement methods based on superconducting quantum interference device (SQUID) and superconductivity-insulation-superconductor (SIS) Josephson junction are pointed out, and a method to measure the shot noises of conventional electronic devices is proposed. Shot noise characteristics of conventional electronic devices are analyzed, and then a low-temperature measurement system is established. By using a double-shielding construction and low noise preamplifier, the test system can achieve a good electromagnetic interference shielding and low background noise. The theoretical and the experimental results of shot noises in diodes at 10 K are in good agreement with each other. The accuracy and the credibility of measurement system are proved.
    [1]

    Schottky W,Ann 1918 Phys. 57 541

    [2]

    Zhang Z Y,Wang T H 2004 Acta Phy.Sin. 53 942(in Chinese)[张志勇、王太宏 2004 物理学报 53 942]

    [3]

    Beenakker C,Sch nenberger C 2003 Phys. Today 56 37

    [4]

    Blanter Y,Büttiker M 2000 Physics Reports 336 1

    [5]

    Andersson S,Svensson C 2005 Electron. Lett. 41 869

    [6]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Phys. Rev. Lett. 83 1660

    [7]

    Bulashenko O,Mateos J,Pardo D,Gonz T,Reggiani L,Rubí J 1998 Phys. Rev. B 57 1366

    [8]

    Sim H S,Schomerus H 2002 Phys. Rev. Lett. 89 066801

    [9]

    McNeill J A 2009 Custom Integrated Circuits Conference 2009 CICC '09. IEEE, San Jose, Sept. 13—16, 2009, 567

    [10]

    Obrecht M S,Abou-Allam E,Manku T 2002 Electron Devices, IEEE Transactions on 49 524

    [11]

    Yan C,Guofu N,Rezvani A,Taylor S S 2008 Silicon Monolithic Integrated Circuits in RF Systems 2008. SiRF 2008. IEEE Topical Meeting on, Orlando, Jan. 23—25, 2008,118

    [12]

    Chen C,Deen M 2002 Electron Devices, IEEE Transactions on 49 1484

    [13]

    Klein P 2002 Electron Device Letters, IEEE 20 399

    [14]

    Navid R,Dutton R 2002 Simulation of Semiconductor Processes and Devices, 2002 SISPAD 2002. International Conference on, Kobe, Japan, Sept 4—6, 2002, 75

    [15]

    Navid R,Jungemann C,Lee T,Dutton R 2007 J. Appl. Phys. 101 124501

    [16]

    Jeon J,Lee J,Kim J,Park C H,Lee H,Oh H,Kang H K,Park B G,Shin H 2009 VLSI Technology, 2009 Symposium on, Kyoto, Japan, June 16—18, 2009,48

    [17]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Rev. Sci. Instrum. 70 2711

    [18]

    Onac E,Balestro F,Trauzettel B,Lodewijk C F,Kouwenhoven L P 2006 Phys. Rev. Lett. 96 026803

    [19]

    Steinbach A H,Martinis J M,Devoret M H 1996 Phys. Rev. Lett. 76 3806

    [20]

    Pralgauskaite S,Palenskis V,Matukas J,Petrulis J,KurilCik G 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66001H

    [21]

    Pralgauskait S,Palenskis V,Matukas J,Vizbaras A 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66000L

    [22]

    Gomila G,Pennetta C,Reggiani L,Sampietro M,Ferrari G,Bertuccio G 2004 Phys. Rev. Lett. 92 226601

    [23]

    Charalambous C D,Menemenlis N 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,2246

    [24]

    Charalambous C D,Menemenlis N,Kabranov O H,Makrakis D 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,1011

    [25]

    Nagaev K E 1995 Phys. Rev. B 52 4740

    [26]

    Kozub V V,Rudin A M 1995 Phys. Rev. B 52 7853

    [27]

    Vandamme L 2005 Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices 189

    [28]

    Cowley A M,Zettler R A 1968 Electron Devices, IEEE Transactions on 15 761

    [29]

    Montgomery H C,Clark M A 1953 Journal of Applied Physics 24 1337

    [30]

    Gomila G,Reggiani L,Rub X M J 2000 Journal of Applied Physics 88 3079

  • [1]

    Schottky W,Ann 1918 Phys. 57 541

    [2]

    Zhang Z Y,Wang T H 2004 Acta Phy.Sin. 53 942(in Chinese)[张志勇、王太宏 2004 物理学报 53 942]

    [3]

    Beenakker C,Sch nenberger C 2003 Phys. Today 56 37

    [4]

    Blanter Y,Büttiker M 2000 Physics Reports 336 1

    [5]

    Andersson S,Svensson C 2005 Electron. Lett. 41 869

    [6]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Phys. Rev. Lett. 83 1660

    [7]

    Bulashenko O,Mateos J,Pardo D,Gonz T,Reggiani L,Rubí J 1998 Phys. Rev. B 57 1366

    [8]

    Sim H S,Schomerus H 2002 Phys. Rev. Lett. 89 066801

    [9]

    McNeill J A 2009 Custom Integrated Circuits Conference 2009 CICC '09. IEEE, San Jose, Sept. 13—16, 2009, 567

    [10]

    Obrecht M S,Abou-Allam E,Manku T 2002 Electron Devices, IEEE Transactions on 49 524

    [11]

    Yan C,Guofu N,Rezvani A,Taylor S S 2008 Silicon Monolithic Integrated Circuits in RF Systems 2008. SiRF 2008. IEEE Topical Meeting on, Orlando, Jan. 23—25, 2008,118

    [12]

    Chen C,Deen M 2002 Electron Devices, IEEE Transactions on 49 1484

    [13]

    Klein P 2002 Electron Device Letters, IEEE 20 399

    [14]

    Navid R,Dutton R 2002 Simulation of Semiconductor Processes and Devices, 2002 SISPAD 2002. International Conference on, Kobe, Japan, Sept 4—6, 2002, 75

    [15]

    Navid R,Jungemann C,Lee T,Dutton R 2007 J. Appl. Phys. 101 124501

    [16]

    Jeon J,Lee J,Kim J,Park C H,Lee H,Oh H,Kang H K,Park B G,Shin H 2009 VLSI Technology, 2009 Symposium on, Kyoto, Japan, June 16—18, 2009,48

    [17]

    Jehl X,Payet-Burin P,Baraduc C,Calemczuk R,Sanquer M 1999 Rev. Sci. Instrum. 70 2711

    [18]

    Onac E,Balestro F,Trauzettel B,Lodewijk C F,Kouwenhoven L P 2006 Phys. Rev. Lett. 96 026803

    [19]

    Steinbach A H,Martinis J M,Devoret M H 1996 Phys. Rev. Lett. 76 3806

    [20]

    Pralgauskaite S,Palenskis V,Matukas J,Petrulis J,KurilCik G 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66001H

    [21]

    Pralgauskait S,Palenskis V,Matukas J,Vizbaras A 2007 Noise and Fluctuations in Circuits, Devices, and Materials, Florence, Italy, May 21, 2007 66000L

    [22]

    Gomila G,Pennetta C,Reggiani L,Sampietro M,Ferrari G,Bertuccio G 2004 Phys. Rev. Lett. 92 226601

    [23]

    Charalambous C D,Menemenlis N 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,2246

    [24]

    Charalambous C D,Menemenlis N,Kabranov O H,Makrakis D 2001 Communications, 2001. ICC 2001. IEEE International Conference on, Helsinki, Finland, Jun 11—14, 2001,1011

    [25]

    Nagaev K E 1995 Phys. Rev. B 52 4740

    [26]

    Kozub V V,Rudin A M 1995 Phys. Rev. B 52 7853

    [27]

    Vandamme L 2005 Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices 189

    [28]

    Cowley A M,Zettler R A 1968 Electron Devices, IEEE Transactions on 15 761

    [29]

    Montgomery H C,Clark M A 1953 Journal of Applied Physics 24 1337

    [30]

    Gomila G,Reggiani L,Rub X M J 2000 Journal of Applied Physics 88 3079

  • [1] Xie Yi-Chen, Zhuang Xiao-Ru, Yue Si-Jun, Li Xiang, Yu Peng, Lu Chun. Experimental study on flow boiling of HFE-7100 in rectangular parallel microchannel. Acta Physica Sinica, 2024, 73(5): 054401. doi: 10.7498/aps.73.20231415
    [2] Shi Chen-Yang, Min Guang-Zong, Liu Xiang-Yang. Research progress of protein-based memristor. Acta Physica Sinica, 2020, 69(17): 178702. doi: 10.7498/aps.69.20200617
    [3] Lan Kang, Du Qian, Kang Li-Sha, Jiang Lu-Jing, Lin Zhen-Yu, Zhang Yan-Hui. The electron transfer properties of an open double quantum dot based on a quantum point contact. Acta Physica Sinica, 2020, 69(4): 040504. doi: 10.7498/aps.69.20191718
    [4] Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(17): 177102. doi: 10.7498/aps.69.20200497
    [5] Song Zhi-Jun, Lü Zhao-Zheng, Dong Quan, Feng Jun-Ya, Ji Zhong-Qing, Jin Yong, Lü Li. Shot noise measurement for tunnel junctions using a homemade cryogenic amplifier at dilution refrigerator temperatures. Acta Physica Sinica, 2019, 68(7): 070702. doi: 10.7498/aps.68.20190114
    [6] Yan Zhi-Meng, Wang Jing, Guo Jian-Hong. Low-bias oscillations of shot noise as signatures of Majorana zero modes. Acta Physica Sinica, 2018, 67(18): 187302. doi: 10.7498/aps.67.20172372
    [7] Cao Zheng-Wen, Zhang Shuang-Hao, Feng Xiao-Yi, Zhao Guang, Chai Geng, Li Dong-Wei. The design and realization of continuous-variable quantum key distribution system based on real-time shot noise variance monitoring. Acta Physica Sinica, 2017, 66(2): 020301. doi: 10.7498/aps.66.020301
    [8] Gu Pin-Chao, Zhang Kai-Liang, Feng Yu-Lin, Wang Fang, Miao Yin-Ping, Han Ye-Mei, Zhang Han-Xia. Recent progress of two-dimensional layered molybdenum disulfide. Acta Physica Sinica, 2016, 65(1): 018102. doi: 10.7498/aps.65.018102
    [9] Zhou Yang, Guo Jian-Hong. Shot noise characteristics of Majorana fermions in transport through double quantum dots. Acta Physica Sinica, 2015, 64(16): 167302. doi: 10.7498/aps.64.167302
    [10] Jia Xiao-Fei, Du Lei, Tang Dong-He, Wang Ting-Lan, Chen Wen-Hao. Research on shot noise suppression in quasi-ballistic transport nano-mOSFET. Acta Physica Sinica, 2012, 61(12): 127202. doi: 10.7498/aps.61.127202
    [11] Tang Dong-He, Du Lei, Wang Ting-Lan, Chen Hua, Chen Wen-Hao. Qualitative analysis of excess noise in nanoscale MOSFET. Acta Physica Sinica, 2011, 60(10): 107201. doi: 10.7498/aps.60.107201
    [12] Liang Zhi-Peng, Dong Zheng-Chao. Shot noise in the semiconductor/ferromagnetic d-wave superconductor tunnel junction. Acta Physica Sinica, 2010, 59(2): 1288-1293. doi: 10.7498/aps.59.1288
    [13] Shi Zhen-Gang, Wen Wei, Chen Xiong-Wen, Xiang Shao-Hua, Song Ke-Hui. Shot noise spectrum of a double quantum dot charge qubit. Acta Physica Sinica, 2010, 59(5): 2971-2975. doi: 10.7498/aps.59.2971
    [14] Chen Hua, Du Lei, Zhuang Yi-Qi, Niu Wen-Juan. Relation between charge shot noise and spin polarization governed by Rashba spin orbit interaction. Acta Physica Sinica, 2009, 58(8): 5685-5692. doi: 10.7498/aps.58.5685
    [15] Chen Hua, Du Lei, Zhuang Yi-Qi. Monte Carlo simulation of shot noise in the coherent and mesoscopic system. Acta Physica Sinica, 2008, 57(4): 2438-2444. doi: 10.7498/aps.57.2438
    [16] An Xing-Tao, Li Yu-Xian, Liu Jian-Jun. Noise in mesoscopic physics. Acta Physica Sinica, 2007, 56(7): 4105-4112. doi: 10.7498/aps.56.4105
    [17] Zhang Zhi-Yong, Wang Tai-Hong. Luttinger parameter of carbon nanotubes investigated by shot noise experiment. Acta Physica Sinica, 2004, 53(3): 942-946. doi: 10.7498/aps.53.942
    [18] DONG ZHENG-CHAO, XING DING-YU, DONG JIN-MING. SHOT NOISE IN FERROMAGNET-SUPERCONDUCTOR TUNNELING JUNCTION. Acta Physica Sinica, 2001, 50(3): 556-560. doi: 10.7498/aps.50.556
    [19] ZHU ZHU-XIANG, ZHENG DA-FANG, LIU YOU-YAN. SPECTRAL DENSITY FOR THE TUNNELING CURRENT ZERO-FREQUENCY SHOT-NOISE IN A ONE-DIMENTIONAL MESOSCOPIC SYSTEM. Acta Physica Sinica, 1999, 48(2): 302-313. doi: 10.7498/aps.48.302
    [20] TSCHEN DSIN-GUANG. SCHROTRAUSCHEN UND THERMISCHES RAUSCHEN IN EINER P-N-FLACHENDIODE. Acta Physica Sinica, 1965, 21(2): 383-389. doi: 10.7498/aps.21.383
Metrics
  • Abstract views:  8618
  • PDF Downloads:  1355
  • Cited By: 0
Publishing process
  • Received Date:  06 September 2010
  • Accepted Date:  11 January 2011
  • Published Online:  15 May 2011

/

返回文章
返回