Metal organic decomposition technique and optical propertiesof amorphous Ba0.7Sr0.3TiO3 thin films

Wang Shang-Bao; Dong Ze-Hua; Xu Zhi-Mou; Peng Jing

doi:10.7498/aps.60.057702

Abstract

With the development of Si-based optical integrated circuit, much attention has been paid to the crystalline and amorphous (BaxSr1-x)TiO3(BST) films due to its good optical properties. In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown on the fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure from barium 2-caprylate Ba(C8H15O2)2 and 3-methylbutyl acetate CH3COOC2H4CH(CH3)2-based special precursors. The optical constants of amorphous BST0.7 thin films including refractive index, extinction coefficient and optical band gap energies were presented. Photoluminescence spectra of BST0.7 films were also observed. The calculated extinction coefficient of 214-nm-thick amorphous BST0.7 thin films in visible and near-infrared region was of the order of 10-3, which is much lower than that of polycrystalline BST thin films. The optical band gap energy and refractive index n were estimated to be about 4.27 eV and n=1.94, respectively. Intensive photoluminescence at room temperature was achieved in the 520 to 610 nm wavelength range with a strong visible peak at 540—570 nm when excited by 450 nm laser light. No photoluminescence was observed in crystalline BST0.7 thin films.

Keywords:

Authors and contacts

(1)College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China; (2)School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China; (3)Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China; College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

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[31]	Tchelbou F, Ryu H S, Hong C K, Park W S, Balk S 1997 Thin Solid Films 299 14
[32]	Xu Z M, Suzuki M, Yokoyama S 2005 Jpn. J. Appl. Phys. 44 8507
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Cited By

[1]	Kip D 1998 Appl. Phys. B 67 131
[2]	Liu Y, Nagra A S, Erker E G, Periiaswamy P, Taylor T R, Speck J, York R A 2000 IEEE Microw. Guided Wave Lett. 10 448
[3]	Rao J B L, Patel D P, Krichevsky V 1999 IEEE Trans. Antennas Propog. 47 458
[4]	Noren B, 2004 Microw. J. 47 210
[5]	Sekhar M C 2004 Mod. J. Phys. B 8 2153
[6]	Kozyrev A, Ivanov A, Keis V, Khazov M, Osadchy V, Samoilova T, Soldatenkov O, Pavlov A, Koepf G, Mueller C, Galt D, Rivkin T 1998 IEEE MTT-S Int. Microw. Symp. Dig. 2 985
[7]	Kim D Y, Moon S E, Kim E K, Korean J 2003 Phys. Soc. 42 1347
[8]	Kim D Y, Moon S E, Kim E K, Lee S J, Choi J J, Kim H E 2003 Appl. Phys. Lett. 82 1455
[9]	Xu Z M, Yuichiro Tanushi, Masato Suzuki, Shin Yokoyama 2006 Appl. Phys. Lett. 88 161107
[10]	Auciello O, Saha S, Kaufman D Y 2004 J. Electroceram. 12 119
[11]	Saha S, Krupanidhi S B 2000 J. Appl. Phys. 87 849
[12]	Wang D Y, Mak C L, Wong K H 2004 Ceram. Int. 30 1745
[13]	Thielsch R, Kaemmer K, Holzapfel B 1997 Thin Solid Films 301 203
[14]	Regnery S, Ehrhart P, Szot K 2003 Integr. Ferroelectr. 57 1175
[15]	Roy S C, Sharma G L, Bhatnagar M C 2004 Appl. Surf. Sci. 236 306
[16]	Chen S Y, Wang H W, Huang L C 2002 Mater. Chem. Phys. 77 632
[17]	Tahan D M, Safari A, Klein L C 1996 J. Am. Ceram. Soc. 6 1593
[18]	Jana P, Pandey R K 1997 Intergr. Ferroelec. 17 153
[19]	Neumayer D A, Duncombe P R, Laibowitz R B, Grill A 1997 Intergr. Ferroelec. 18 297
[20]	Zhu W, Tan O K, Deng J, Oh J T 2000 J. Mater. Res. 15 1291
[21]	Kim T G, Oh J, Kim Y, Moon T, Hong K S, Parky B 2003 Jpn. J. Appl.Phys. 42 1315
[22]	Melo D M A, Cesar A, Martinelli A E, Silva Z R, Leite E R, Longo E, Pizanni P S 2004 J. Solid State Chem. 177 670
[23]	Pontes F M, Leite E R, Pontes D S L, Longo E 2002 J. Appl. Phys. 91 5972
[24]	Manifacier J C, Gasiot J, Fillard J P 1976 J. Phys. E, Sci. Instrum. 9 1002
[25]	Swanepoel R 1983 J. Phys. E, Sci. Instrum. 16 1214
[26]	Panda B, Dhar A, Nigam G D, Bhattacharya D, Ray S K 1998 Thin Solid Films 332 46
[27]	Bao D, Yao X, Wakiya N, Shinozaki K, Mizutani N 2001 Appl. Phys. Lett. 79 3767
[28]	Tauc J C 1974 Amorphous and Liquid Semiconductor (New York:Plenum Press)
[29]	Tauc J C 1972 Optical Properties of Solids (North-Holland:Amsterdam)
[30]	Wang Y P, Tseng T Y 1999 J. Mater. Sci. 34 4573
[31]	Tchelbou F, Ryu H S, Hong C K, Park W S, Balk S 1997 Thin Solid Films 299 14
[32]	Xu Z M, Suzuki M, Yokoyama S 2005 Jpn. J. Appl. Phys. 44 8507
[33]	Hodes G, Yaron A A, Decker F, Motisuka P 1987 Phys. Rev. B 36 4215
[34]	Chopra K L, Paulson P D, Dutta V 2004 Prog. Photovolt. Res. Appl. 12 69

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Vol. 60, Issue 5 - 2011-03-05

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