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Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate

Qu Jiang-Tao Zhang He-Ming Wang Guan-Yu Wang Xiao-Yan Hu Hui-Yong

Citation:

Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate

Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong
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  • Abstract views:  7673
  • PDF Downloads:  631
  • Cited By: 0
Publishing process
  • Received Date:  04 June 2010
  • Accepted Date:  17 August 2010
  • Published Online:  15 May 2011

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